17950512. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jangeun Lee of Hwaseong-si (KR)
Hyojung Noh of Cheonan-si (KR)
Minwoo Song of Seongnam-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17950512 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device, specifically focusing on the formation of a trench, gate dielectric layer, and gate layer, followed by annealing. After the annealing process, the gate layer consists of a molybdenum-tantalum alloy.
- The method involves creating a trench in a substrate.
- A gate dielectric layer is then formed on the trench.
- A gate layer is formed on top of the gate dielectric layer.
- The gate dielectric layer and gate layer are annealed.
- The gate layer is transformed into a molybdenum-tantalum alloy after annealing.
Potential Applications
- This method can be applied in the manufacturing of various semiconductor devices.
- It can be used in the production of transistors, integrated circuits, and other electronic components.
Problems Solved
- The method provides a reliable and efficient way to manufacture semiconductor devices.
- It ensures the formation of a high-quality gate layer with a molybdenum-tantalum alloy composition.
Benefits
- The use of a molybdenum-tantalum alloy in the gate layer enhances the performance and durability of the semiconductor device.
- The annealing process helps to optimize the properties of the gate layer.
- The method allows for precise control over the manufacturing process, resulting in consistent and reliable semiconductor devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes an forming a trench in a substrate, forming a gate dielectric layer on the trench, forming a gate layer on the gate dielectric layer, and annealing the gate dielectric layer and the gate layer, wherein, after the first annealing operation, the gate layer includes a molybdenum-tantalum alloy.
