17950001. Method and Apparatus for In-Situ Dry Development simplified abstract (TOKYO ELECTRON LIMITED)

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Method and Apparatus for In-Situ Dry Development

Organization Name

TOKYO ELECTRON LIMITED

Inventor(s)

Steven Grzeskowiak of Albany NY (US)

Eric Chih-Fang Liu of Albany NY (US)

Method and Apparatus for In-Situ Dry Development - A simplified explanation of the abstract

This abstract first appeared for US patent application 17950001 titled 'Method and Apparatus for In-Situ Dry Development

Simplified Explanation

The embodiment etching tool described in the abstract is a tool used for plasma etching wafers in a semiconductor manufacturing process. Here are some key points to explain the patent/innovation:

  • The etching tool includes an etch chamber for plasma etching a first wafer.
  • It also has a transfer chamber connected to the etch chamber.
  • There is a first run path between the transfer chamber and the etch chamber for moving the wafer to be processed.
  • The tool is designed to dry develop the wafer before etching a hard mask on it in the etch chamber.

Potential Applications

The technology can be applied in semiconductor manufacturing processes for etching wafers with precision and efficiency.

Problems Solved

This technology solves the problem of accurately etching wafers while ensuring proper development and protection of the wafer surface.

Benefits

The benefits of this technology include improved etching accuracy, reduced processing time, and enhanced overall efficiency in semiconductor manufacturing.

Potential Commercial Applications

The technology can be utilized by semiconductor manufacturing companies to enhance their production processes and improve the quality of their products.

Possible Prior Art

One possible prior art could be similar etching tools used in semiconductor manufacturing processes, but with different configurations or functionalities.

Unanswered Questions

How does the dry development process work in the etching tool?

The abstract mentions that the tool is configured to dry develop the wafer before etching a hard mask. It would be interesting to know more about the specific process and techniques used for this dry development step.

What materials are typically used for the hard mask in the etching tool?

The abstract mentions etching a hard mask on the wafer in the etch chamber. It would be helpful to understand the materials commonly used for these hard masks and their properties in the semiconductor manufacturing industry.


Original Abstract Submitted

An embodiment etching tool includes an etch chamber for plasma etching a first wafer to be processed; a transfer chamber coupled to the etch chamber; a first run path between the transfer chamber and the etch chamber, the first run path including a path for moving the first wafer to be processed from the transfer chamber to the etch chamber, where the etching tool is configured to dry develop the first wafer to be processed before etching a hard mask on the first wafer in the etch chamber.