17949474. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jhen-Yu Tsai of KAOHSIUNG CITY (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17949474 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with a trench and a gate structure in the trench. The gate structure consists of a lower gate electrode, an upper gate electrode positioned above the lower gate electrode, and a silicide layer that makes contact with the upper gate electrode.
- The semiconductor device features a gate structure with a lower gate electrode, an upper gate electrode, and a silicide layer.
- The gate structure is located within a trench on the substrate.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
The innovation addressed in this patent application helps solve the following issues:
- Enhancing the performance of semiconductor devices
- Improving the efficiency of gate structures in electronic components
Benefits
The semiconductor device and method of manufacturing it offer the following benefits:
- Increased functionality and performance of electronic devices
- Enhanced reliability and durability of semiconductor components
Potential Commercial Applications
The technology outlined in this patent application could be utilized in various commercial applications, including:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art related to this technology could be the use of silicide layers in semiconductor devices to improve conductivity and performance.
Unanswered Questions
How does the gate structure impact the overall efficiency of the semiconductor device?
The gate structure plays a crucial role in the performance of the semiconductor device by controlling the flow of current. By optimizing the gate structure, the efficiency of the device can be significantly improved.
What are the specific manufacturing processes involved in creating the gate structure with the silicide layer?
The manufacturing process for creating the gate structure with the silicide layer may involve various steps such as deposition, etching, and annealing. Understanding these processes is essential for replicating the technology in other semiconductor devices.
Original Abstract Submitted
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode, an upper gate electrode disposed over the lower gate electrode, and a silicide layer contacting the upper gate electrode.
