17948670. SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES simplified abstract (GENERAL ELECTRIC COMPANY)
Contents
- 1 SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES
Organization Name
Inventor(s)
Collin William Hitchcock of Clifton Park NY (US)
Reza Ghandi of Niskayuna NY (US)
SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17948670 titled 'SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WIDE BAND GAP SUPER-JUNCTION POWER DEVICES
Simplified Explanation
The abstract describes a super-junction (SJ) device with specific layers and doping concentrations to improve performance.
- SJ device includes a first epitaxial layer forming a SJ layer and a second epitaxial layer forming a device layer.
- First epitaxial layer has SJ pillars with specific doping concentrations of different conductivity types.
- Second epitaxial layer has implanted regions for junction termination overlapping with SJ pillars.
Potential Applications
The technology described in the patent application could be applied in power electronics, such as in high-voltage switches and converters.
Problems Solved
This technology helps improve the efficiency and performance of SJ devices by optimizing the doping concentrations and junction termination areas.
Benefits
The benefits of this technology include enhanced power handling capabilities, reduced energy losses, and improved reliability in high-power applications.
Potential Commercial Applications
"Enhancing Power Electronics Performance with Super-Junction Devices"
Possible Prior Art
There may be prior art related to SJ devices with optimized doping concentrations and junction termination areas, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing SJ devices in terms of efficiency and performance?
The abstract does not provide a direct comparison with existing SJ devices, so it is unclear how this technology stands out in the market.
Are there any limitations or drawbacks to implementing this technology in practical applications?
The abstract does not mention any potential limitations or drawbacks of using this technology, leaving room for further exploration into its real-world applicability.
Original Abstract Submitted
A super-junction (SJ) device includes a first epitaxial (epi layer) that forms a first SJ layer of the SJ device and includes a second epi layer disposed on the first SJ layer that forms a device layer of the SJ device. An active area and a termination area of the first epi layer includes a first set of SJ pillars that have a particular doping concentration of a first conductivity type and a second set of SJ pillars that have the particular doping concentration of a second conductivity type. A termination area of the second epi layer includes one or more implanted regions that form a junction termination that overlaps with at least one SJ pillar of the first set of SJ pillars or the second set of SJ pillars in the termination area of the first epi layer.
