View source for 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)

=FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Punyashloka Debashis of Hillsboro OR (US)|Punyashloka Debashis of Hillsboro OR (US)]][[Category:Punyashloka Debashis of Hillsboro OR (US)]]

[[:Category:Rachel A. Steinhardt of Beaverton OR (US)|Rachel A. Steinhardt of Beaverton OR (US)]][[Category:Rachel A. Steinhardt of Beaverton OR (US)]]

[[:Category:Brandon Holybee of Portland OR (US)|Brandon Holybee of Portland OR (US)]][[Category:Brandon Holybee of Portland OR (US)]]

[[:Category:Kevin P. O'brien of Portland OR (US)|Kevin P. O'brien of Portland OR (US)]][[Category:Kevin P. O'brien of Portland OR (US)]]

[[:Category:Dmitri Evgenievich Nikonov of Beaverton OR (US)|Dmitri Evgenievich Nikonov of Beaverton OR (US)]][[Category:Dmitri Evgenievich Nikonov of Beaverton OR (US)]]

[[:Category:John J. Plombon of Portland OR (US)|John J. Plombon of Portland OR (US)]][[Category:John J. Plombon of Portland OR (US)]]

[[:Category:Ian Alexander Young of Olympia WA (US)|Ian Alexander Young of Olympia WA (US)]][[Category:Ian Alexander Young of Olympia WA (US)]]

[[:Category:Raseong Kim of Portland OR (US)|Raseong Kim of Portland OR (US)]][[Category:Raseong Kim of Portland OR (US)]]

[[:Category:Carly Rogan of North Plains OR (US)|Carly Rogan of North Plains OR (US)]][[Category:Carly Rogan of North Plains OR (US)]]

[[:Category:Dominique A. Adams of Portland OR (US)|Dominique A. Adams of Portland OR (US)]][[Category:Dominique A. Adams of Portland OR (US)]]

[[:Category:Arnab Sen Gupta of Hillsboro OR (US)|Arnab Sen Gupta of Hillsboro OR (US)]][[Category:Arnab Sen Gupta of Hillsboro OR (US)]]

[[:Category:Marko Radosavljevic of Portland OR (US)|Marko Radosavljevic of Portland OR (US)]][[Category:Marko Radosavljevic of Portland OR (US)]]

[[:Category:Scott B. Clendenning of Portland OR (US)|Scott B. Clendenning of Portland OR (US)]][[Category:Scott B. Clendenning of Portland OR (US)]]

[[:Category:Gauri Auluck of Hillsboro OR (US)|Gauri Auluck of Hillsboro OR (US)]][[Category:Gauri Auluck of Hillsboro OR (US)]]

[[:Category:Hai Li of Portland OR (US)|Hai Li of Portland OR (US)]][[Category:Hai Li of Portland OR (US)]]

[[:Category:Matthew V. Metz of Portland OR (US)|Matthew V. Metz of Portland OR (US)]][[Category:Matthew V. Metz of Portland OR (US)]]

[[:Category:Tristan A. Tronic of Aloha OR (US)|Tristan A. Tronic of Aloha OR (US)]][[Category:Tristan A. Tronic of Aloha OR (US)]]

[[:Category:I-Cheng Tung of Hillsboro OR (US)|I-Cheng Tung of Hillsboro OR (US)]][[Category:I-Cheng Tung of Hillsboro OR (US)]]

==FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17947071 titled 'FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES

==Simplified Explanation==

The abstract describes a transistor device with specific layers and materials arranged in a particular configuration.

* The transistor device includes a gate material layer, a ferroelectric (FE) material layer, a semiconductor channel material layer, and first and second source/drain materials.
* The FE material layer is positioned between the gate material and the source/drain materials.
* The first source/drain material is adjacent to the semiconductor channel material layer, while the second source/drain material is on the opposite side of the channel material layer.
* The FE material layer is divided into two portions, with each portion directly between the gate material and one of the source/drain materials.

== Potential Applications ==
This technology could be applied in:
* Advanced electronic devices
* Memory storage devices
* High-performance computing systems

== Problems Solved ==
This technology helps in:
* Improving transistor performance
* Enhancing data storage capabilities
* Increasing energy efficiency in electronic devices

== Benefits ==
The benefits of this technology include:
* Faster data processing speeds
* Higher memory density
* Lower power consumption in electronic devices

== Potential Commercial Applications ==
The potential commercial applications of this technology could be in:
* Semiconductor industry
* Electronics manufacturing sector
* Research and development organizations

== Possible Prior Art ==
One possible prior art for this technology could be:
* Previous patents related to ferroelectric materials in transistor devices

== Unanswered Questions ==

=== How does this technology compare to existing transistor designs? ===
This article does not provide a direct comparison to existing transistor designs in terms of performance, efficiency, or cost.

=== What are the specific manufacturing processes involved in creating this transistor device? ===
The article does not detail the specific steps or techniques used in manufacturing this transistor device.


==Original Abstract Submitted==

In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.



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