17946812. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Byunghoon Cho of Yongin-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17946812 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with a substrate that has a cell area and a peripheral circuit area. It includes cell transistors in the cell area and a peripheral circuit in the peripheral circuit area. The device also has a first etch stop film covering the cell transistors and a second etch stop film covering the peripheral circuit, with a bottom plug space passing through it. The cell area has a capacitor structure with lower electrodes connected to the cell transistors. The peripheral circuit area has a contact passing through the second etch stop film and connected to the peripheral circuit. An insulating liner surrounds a portion of the contact's side wall.
- The semiconductor device has a substrate with separate areas for cell transistors and peripheral circuits.
- It includes etch stop films to protect the cell transistors and peripheral circuit.
- The cell area has a capacitor structure with lower electrodes connected to the cell transistors.
- The peripheral circuit area has a contact passing through the etch stop film and connected to the peripheral circuit.
- An insulating liner surrounds a portion of the contact's side wall.
Potential Applications
- This semiconductor device can be used in various electronic devices such as smartphones, computers, and tablets.
- It can be applied in the manufacturing of integrated circuits for improved performance and functionality.
Problems Solved
- The separate areas for cell transistors and peripheral circuits help in reducing interference and improving overall device performance.
- The etch stop films protect the sensitive components from damage during manufacturing processes.
- The insulating liner provides additional protection and stability to the contact structure.
Benefits
- The semiconductor device offers improved performance and functionality due to the separate areas for cell transistors and peripheral circuits.
- The etch stop films and insulating liner provide enhanced protection to sensitive components, increasing the device's reliability.
- The capacitor structure in the cell area allows for efficient energy storage and utilization.
Original Abstract Submitted
A semiconductor device including a substrate including a cell area and a peripheral circuit area, a plurality of cell transistors in the cell area, a peripheral circuit in the peripheral circuit area, a first etch stop film covering the cell transistors, a second etch stop film covering the peripheral circuit and defining a bottom plug space passing therethrough, a capacitor structure in the cell area and including lower electrodes passing through the first etch stop film and respectively connected to the cell transistors, a peripheral circuit contact in the peripheral circuit area, the peripheral circuit contact passing through the second etch stop film and electrically connected to the peripheral circuit, and an insulating liner on a side wall portion of the second etch stop film defining the bottom plug space, the insulating liner surrounding a portion of a side wall of the peripheral circuit contact may be provided.
