17946109. WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
- 1 WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to traditional wire bonding methods for connecting semiconductor dies to metallization structures?
- 1.11 What are the specific electronic devices that could benefit the most from this technology?
- 1.12 Original Abstract Submitted
WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Osvaldo Lopez of Annandale PA (US)
Salvatore Pavone of Houston TX (US)
Sreenivasan Koduri of Dallas TX (US)
WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17946109 titled 'WAFER BASED MOLDED FLIP CHIP ROUTABLE IC PACKAGE
Simplified Explanation
The electronic device described in the patent application includes a multilevel metallization structure, a semiconductor die, and a package structure. The multilevel metallization structure has multiple levels of conductive metal traces and vias, as well as polyimide insulator material. The semiconductor die is flip chip attached to the multilevel metallization structure, with conductive features connected to the metal pads of the final level. The package structure encloses the semiconductor die and portions of the multilevel metallization structure.
- Multilevel metallization structure with multiple levels of metal traces, vias, and insulator material.
- Semiconductor die flip chip attached to the structure with conductive features connected to metal pads.
- Package structure enclosing the semiconductor die and parts of the metallization structure.
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of efficiently connecting a semiconductor die to a multilevel metallization structure in electronic devices.
Benefits
The benefits of this technology include improved performance, reliability, and compactness of electronic devices.
Potential Commercial Applications
The technology could be commercially applied in the manufacturing of consumer electronics, industrial equipment, and automotive systems.
Possible Prior Art
One possible prior art for this technology could be the use of wire bonding or other traditional methods to connect semiconductor dies to metallization structures in electronic devices.
Unanswered Questions
How does this technology compare to traditional wire bonding methods for connecting semiconductor dies to metallization structures?
The article does not provide a direct comparison between this technology and traditional wire bonding methods in terms of performance, cost, or reliability.
What are the specific electronic devices that could benefit the most from this technology?
The article does not specify which electronic devices would see the most significant improvements from the implementation of this technology.
Original Abstract Submitted
An electronic device includes a multilevel metallization structure, a semiconductor die, and a package structure. The multilevel metallization structure has multiple levels of conductive metal traces and vias and polyimide insulator material, including a first level along a first side and a final level along a second side. The first level includes conductive metal leads with exposed surfaces along the first side, and the final level includes conductive metal pads with exposed surfaces along the second side. The semiconductor die is flip chip attached to the first side of the multilevel metallization structure with conductive features connected to respective conductive metal pads of the final level of the multilevel metallization structure, and the package structure encloses the semiconductor die and portions of the first side of the multilevel metallization structure.
