17945897. SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH simplified abstract (TOKYO ELECTRON LIMITED)
Contents
- 1 SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
Organization Name
Inventor(s)
Jonathan Hollin of Albany NY (US)
Matthew Flaugh of Albany NY (US)
Subhadeep Kal of Albany NY (US)
Aelan Mosden of Albany NY (US)
SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 17945897 titled 'SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
Simplified Explanation
The abstract describes a method where a surface of a substrate with at least two different layers of materials is modified, with one layer being selectively converted to a protection layer while the other layer is etched.
- The substrate has multiple layers of different materials.
- One layer is modified and converted into a protection layer.
- The other layer is etched to achieve the desired outcome.
Potential Applications
This technology could be applied in the semiconductor industry for creating protective layers on sensitive components.
Problems Solved
This method solves the problem of protecting one layer of a substrate while etching another layer, allowing for precise modifications.
Benefits
The benefits of this technology include improved control over surface modifications and enhanced protection for sensitive layers on substrates.
Potential Commercial Applications
"Protective Layer Creation on Multi-layer Substrates in Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to selective surface modification techniques in the semiconductor industry.
Unanswered Questions
How does this method compare to existing techniques in terms of efficiency and precision?
The article does not provide a direct comparison with existing techniques in the field.
Are there any limitations to the types of materials that can be used in this process?
The article does not address any potential limitations regarding the materials used in the substrate layers.
Original Abstract Submitted
A surface of a substrate is modified, where the substrate includes at least two different layers or films of different materials. The modified layer is then selectively converted to a protection layer on one of the layers, while the other layer is etched.
