17945542. DECOUPLING CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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DECOUPLING CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jongmin Lee of Hwaseong-si (KR)

DECOUPLING CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17945542 titled 'DECOUPLING CAPACITOR STRUCTURE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

Simplified Explanation

The abstract describes a decoupling capacitor structure that includes various components such as insulating division pattern, conductive pads, lower electrode sets, support structure, dielectric layer, and upper electrode structure.

  • The conductive pads are located on opposite sides of the insulating division pattern.
  • The lower electrode sets are spaced apart from each other horizontally on each conductive pad.
  • The support structure connects the sidewalls of the lower electrodes.
  • A dielectric layer is present on the lower electrodes and the support structure.
  • An upper electrode structure is formed on top of the dielectric layer.
  • The lower electrode sets consist of first lower electrodes adjacent to the insulating division pattern and second lower electrodes spaced apart from the first ones horizontally.
  • The support structure creates an opening between the second lower electrodes, but not between the first lower electrodes or between the first and second lower electrodes.

Potential applications of this technology:

  • Integrated circuits
  • Electronic devices
  • Power supply systems

Problems solved by this technology:

  • Improved decoupling capacitor structure
  • Enhanced performance and reliability of integrated circuits
  • Efficient power supply and noise reduction

Benefits of this technology:

  • Better decoupling of electrical signals
  • Reduced noise interference
  • Enhanced performance and reliability of electronic devices


Original Abstract Submitted

A decoupling capacitor structure includes an insulating division pattern, conductive pads, lower electrode sets, a support structure, a dielectric layer, and an upper electrode structure. The conductive pads are at opposite sides of the insulating division pattern. The lower electrode sets are spaced apart from each other in a horizontal direction on each conductive pad. The support structure contacts and connects sidewalls of the lower electrodes. The dielectric layer is on the lower electrodes and the support structure. The upper electrode structure is on the dielectric layer. The lower electrode sets include first lower electrodes adjacent to the insulating division pattern and second lower electrodes spaced apart from the first lower electrodes in the horizontal direction. The support structure defines an opening between the second lower electrodes. The opening is not formed between the first lower electrodes or between the first lower electrodes the second lower electrodes.

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