17945408. Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control simplified abstract (TOKYO ELECTRON LIMITED)
Contents
- 1 Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control
Organization Name
Inventor(s)
Sergey Voronin of Albany NY (US)
Hamed Hajibabaeinajafabadi of Albany NY (US)
Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control - A simplified explanation of the abstract
This abstract first appeared for US patent application 17945408 titled 'Substrate Bombardment with Ions having Targeted Mass using Pulsed Bias Phase Control
Simplified Explanation
The method described in the abstract involves plasma processing by generating plasma with specific ion densities and delivering an energetic ion flux to a substrate at a precise timing.
- Plasma is generated by coupling a source power pulse to a plasma processing chamber.
- The plasma contains first ions with a certain mass and second ions with a greater mass.
- An energetic ion flux is delivered to the substrate by applying a delayed bias power pulse after a specific delay.
- The delay is chosen based on the diffusion time constants of the ions to achieve a desired ion density ratio.
Potential Applications
This technology can be applied in:
- Semiconductor manufacturing
- Thin film deposition
- Surface modification processes
Problems Solved
This technology addresses:
- Controlling ion densities in plasma processing
- Improving substrate surface quality
- Enhancing process efficiency
Benefits
The benefits of this technology include:
- Enhanced control over ion flux
- Improved substrate processing quality
- Increased process efficiency
Potential Commercial Applications
This technology can be utilized in:
- Semiconductor industry for advanced processing techniques
- Solar panel manufacturing for improved efficiency
- Display technology for enhanced performance
Possible Prior Art
One potential prior art for this technology could be:
- Research on plasma processing techniques with ion density control
Unanswered Questions
How does this technology compare to existing plasma processing methods?
This article does not provide a direct comparison with existing plasma processing methods. Further research or comparative studies would be needed to determine the advantages and limitations of this technology in comparison to existing methods.
What are the specific industries that could benefit the most from this technology?
While the potential applications are mentioned, a more detailed analysis of the specific industries that could benefit the most from this technology is not provided in the article. Further market research and industry collaborations would be necessary to identify the key sectors where this technology could have the most significant impact.
Original Abstract Submitted
A method of plasma processing includes generating plasma by coupling a source power pulse to a plasma processing chamber containing a substrate holder configured to support a substrate. The plasma includes first ions having a first mass and second ions having a second mass greater than the first mass. The ion density ratio of the second ions to the first ions is a first ratio. The method further includes delivering an energetic ion flux of second ions to the substrate by applying a delayed bias power pulse to the substrate holder after a delay between the source power pulse and the delayed bias power pulse. The delay is chosen based on the diffusion time constants of the first ions and the second ions so that the ion density ratio of the second ions to the first ions is a second ratio that is greater than the first ratio.
