17944430. SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR PACKAGE
Organization Name
Inventor(s)
Seungduk Baek of Hwaseong-si (KR)
Won IL Lee of Hwaseong-si (KR)
SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17944430 titled 'SEMICONDUCTOR PACKAGE
Simplified Explanation
The abstract describes a semiconductor package that includes a semiconductor substrate, a through electrode, a first pad, and a dielectric structure. The dielectric structure surrounds the through electrode and the first pad, and it consists of a first dielectric pattern, an etch stop pattern, and a second dielectric pattern.
- The semiconductor package includes a through electrode that penetrates the semiconductor substrate.
- A first pad is placed on the through electrode.
- A dielectric structure is present on the semiconductor substrate.
- The lower portion of the dielectric structure surrounds the through electrode.
- The upper portion of the dielectric structure surrounds the first pad.
- The dielectric structure consists of a first dielectric pattern, an etch stop pattern, and a second dielectric pattern.
- The first pad is in contact with the through electrode, the first dielectric pattern, the etch stop pattern, and the second dielectric pattern.
- The top surface of the through electrode is higher than the top surface of the first dielectric pattern.
Potential applications of this technology:
- Semiconductor packaging for electronic devices.
- Integrated circuits and microchips.
Problems solved by this technology:
- Provides a structure for efficient electrical connections in a semiconductor package.
- Helps in reducing signal interference and noise.
- Improves the overall performance and reliability of electronic devices.
Benefits of this technology:
- Enhanced electrical connectivity and signal transmission.
- Improved protection against external factors and environmental conditions.
- Increased efficiency and reliability of semiconductor devices.
Original Abstract Submitted
A semiconductor package includes: a semiconductor substrate; a through electrode that penetrates the semiconductor substrate; a first pad disposed on the through electrode; and a dielectric structure disposed on the semiconductor substrate, wherein a lower portion of the dielectric structure at least partially surrounds the through electrode, wherein an upper portion of the dielectric structure at least partially surrounds the first pad, wherein the dielectric structure includes: a first dielectric pattern; an etch stop pattern disposed on the first dielectric pattern; and a second dielectric pattern spaced apart from the first dielectric pattern by the etch stop pattern, wherein the first pad is in contact with the through electrode, the first dielectric pattern, the etch stop pattern, and second dielectric pattern, and wherein a top surface of the through electrode is at a level higher than a level of a top surface of the first dielectric pattern.
