17944407. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jongmin Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17944407 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that includes various structures such as gate structures, bit line structures, contact plug structures, first capacitors, and second capacitors. These structures are formed on a substrate, which has a cell region and a peripheral circuit region.

  • Gate structures are formed in the substrate and extend in a first direction.
  • Bit line structures are formed on the cell region of the substrate and extend in a second direction.
  • Contact plug structures are placed between the bit line structures in the second direction.
  • First capacitors are formed on the contact plug structures.
  • A conductive pad is formed on the peripheral circuit region of the substrate and is electrically insulated from the substrate.
  • Second capacitors are formed on the conductive pad and are arranged in both the first and second directions.

Potential Applications

  • This semiconductor device can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
  • It can also be applied in industrial equipment, automotive electronics, and communication devices.

Problems Solved

  • The patent addresses the need for a semiconductor device with efficient gate structures, bit line structures, and contact plug structures.
  • It solves the problem of integrating capacitors into the device, allowing for improved performance and functionality.

Benefits

  • The device provides improved performance and functionality due to its optimized gate structures, bit line structures, and contact plug structures.
  • The integration of capacitors enhances the overall efficiency and reliability of the semiconductor device.
  • The conductive pad on the peripheral circuit region allows for better electrical insulation and connectivity.


Original Abstract Submitted

A semiconductor device includes gate structures, bit line structures, contact plug structures, first capacitors, and second capacitors. The gate structures are formed in a substrate including a cell region and a peripheral circuit region, and each of the gate structures extends in a first direction. The bit line structures are formed on the cell region of the substrate, and each of the bit line structures extends in a second direction. The contact plug structures are disposed in the second direction between the bit line structures on the substrate. The first capacitors are formed on the contact plug structures, respectively. The conductive pad is formed on the peripheral circuit region of the substrate, and is electrically insulated from the substrate. The second capacitors are formed on the conductive pad, and are disposed in the first and second directions.