17943819. WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN simplified abstract (Intel Corporation)

WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN

Organization Name

Intel Corporation

Inventor(s)

Nicholas A. Thomson of Hillsboro OR (US)

Kalyan C. Kolluru of Portland OR (US)

Ayan Kar of Portland OR (US)

Chu-Hsin Liang of Santa Cruz CA (US)

Benjamin Orr of Beaverton OR (US)

Biswajeet Guha of Hillsboro OR (US)

Brian Greene of Portland OR (US)

Chung-Hsun Lin of Portland OR (US)

Sabih U. Omar of Hillsboro OR (US)

Sameer Jayanta Joglekar of Beaverton OR (US)

WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17943819 titled 'WIDE CHANNEL DIODE STRUCTURE INCLUDING SUB-FIN

Simplified Explanation

The abstract describes an integrated circuit structure that includes a sub-fin with a first portion containing a p-type dopant and a second portion containing an n-type dopant. The structure forms a PN junction diode.

• The integrated circuit structure includes a sub-fin with different dopants in different portions.
• A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin.
• The first and second portions of the sub-fin are in contact with each other, forming a PN junction diode.
• The first portion of the sub-fin acts as the anode of the diode, while the second portion acts as the cathode.

Potential Applications

This technology could be applied in:

• Semiconductor devices
• Integrated circuits
• Diode structures

Problems Solved

This technology helps in:

• Improving the efficiency of diode structures
• Enhancing the performance of integrated circuits
• Facilitating the design of complex semiconductor devices

Benefits

The benefits of this technology include:

• Enhanced functionality of integrated circuits
• Improved electrical properties of diode structures
• Increased versatility in semiconductor device design

Potential Commercial Applications

Optimizing Diode Structures for Enhanced Performance

Unanswered Questions

How does this technology impact the overall efficiency of integrated circuits?

This technology can potentially improve the efficiency of integrated circuits by enhancing the performance of diode structures, but the specific impact on overall efficiency needs further exploration.

What are the potential challenges in implementing this technology on a larger scale?

While the abstract highlights the benefits of the integrated circuit structure, the practical challenges of scaling up this technology for commercial applications remain unclear. Further research is needed to address these potential challenges.

Original Abstract Submitted

An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.