17941688. SEMICONDUCTOR DEVICE INCLUDING CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17941688 titled 'SEMICONDUCTOR DEVICE INCLUDING CAPACITOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes various components such as a substrate, gate structure, capacitor contact structure, lower electrode, supporter, interfacial layer, capacitor insulating layer, and upper electrode.
- The interfacial layer of the device contains a halogen material and is positioned between the lower electrode and the capacitor insulating layer.
- The halogen material in the interfacial layer is closer to the first surface (contacting the lower electrode) than to the second surface (contacting the capacitor insulating layer).
- The supporter is responsible for supporting a sidewall of the lower electrode.
- The device is designed to improve the performance and functionality of semiconductor devices.
Potential Applications
- This technology can be applied in various semiconductor devices such as integrated circuits, microprocessors, memory chips, and transistors.
- It can be used in electronic devices like smartphones, computers, tablets, and other consumer electronics.
Problems Solved
- The technology addresses the need for improved performance and functionality in semiconductor devices.
- It solves the problem of maintaining a stable and reliable connection between the lower electrode and the capacitor insulating layer.
Benefits
- The use of the halogen material in the interfacial layer improves the performance and reliability of the semiconductor device.
- The supporter provides structural support to the lower electrode, enhancing the overall stability of the device.
- The technology enables the development of more advanced and efficient semiconductor devices.
Original Abstract Submitted
A semiconductor device of the disclosure may include a substrate, a gate structure on the substrate, a capacitor contact structure connected to the substrate, a lower electrode connected to the capacitor contact structure, a supporter supporting a sidewall of the lower electrode, an interfacial layer covering the lower electrode and including a halogen material, a capacitor insulating layer covering the interfacial layer and the supporter, and an upper electrode covering the capacitor insulating layer. The interfacial layer may include a first surface contacting the lower electrode, and a second surface contacting the capacitor insulating layer. The halogen material of the interfacial layer may be closer to the first surface than to the second surface.
