17940623. FERROELECTRIC MEMORY DEVICE ERASURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

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FERROELECTRIC MEMORY DEVICE ERASURE

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Nanbo Gong of White Plains NY (US)

Takashi Ando of Eastchester NY (US)

Guy M. Cohen of Westchester NY (US)

FERROELECTRIC MEMORY DEVICE ERASURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17940623 titled 'FERROELECTRIC MEMORY DEVICE ERASURE

Simplified Explanation

The patent application describes a non-volatile memory structure with a proximity heater that generates Joule heating to raise the temperature of a ferroelectric material layer above its Curie temperature, enabling memory erasure in case of tampering.

  • Proximity heater or localized heater used to generate Joule heating
  • Raises temperature of ferroelectric material layer above Curie temperature
  • Triggered by tampering detection
  • Enables memory erasure through Joule heating

Potential Applications

This technology could be applied in secure data storage systems, anti-tampering devices, and data protection mechanisms.

Problems Solved

This innovation addresses the issue of data security by providing a method for secure memory erasure in case of tampering or unauthorized access.

Benefits

- Enhanced data security - Reliable memory erasure - Protection against tampering

Potential Commercial Applications

Secure Data Storage Solutions: Implementing this technology in data storage devices can enhance data security and protect sensitive information. Anti-Tampering Devices: This innovation can be utilized in anti-tampering devices to ensure data integrity and prevent unauthorized access.


Original Abstract Submitted

A non-volatile memory (NVM) structure is provided including a proximity heater or a localized heater that is configured to generate Joule heating to increase temperature of a ferroelectric material layer of a ferroelectric memory device higher than a Currie temperature of the ferroelectric material layer. The Joule heating is trigged when tampering in the NVM structure is detected and as a result of the Joule heating memory erasure can occur.

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