17938344. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Junyeong Heo of Suwon-si (KR)

Unbyoung Kang of Hwaseong-si (KR)

Donghoon Won of Cheonan-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17938344 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The patent application describes a semiconductor device that includes a semiconductor substrate with a device region and a wiring structure. The device also includes an insulating material layer on the side surface of the wiring structure, which is connected to the side surface of the semiconductor substrate.

  • The semiconductor device includes a semiconductor substrate with a device region and a wiring structure.
  • An insulating material layer is present on the side surface of the wiring structure and is connected to the side surface of the semiconductor substrate.
  • The side surface of the insulating material layer has a wave-shaped pattern with repeated concave-convex portions in the direction of the wiring structure.
  • The side surface of the semiconductor substrate also has a wave-shaped pattern with repeated concave-convex portions in the same direction.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices such as smartphones, computers, and other consumer electronics.
  • It can be utilized in the automotive industry for advanced driver assistance systems, infotainment systems, and other electronic components in vehicles.
  • This technology can also find applications in the medical field for medical devices and equipment.

Problems solved by this technology:

  • The wave-shaped pattern on the side surfaces of the insulating material layer and the semiconductor substrate helps in improving the adhesion between the two surfaces.
  • It provides better electrical connectivity and reduces the risk of disconnection or failure of the wiring structure.
  • The wave-shaped pattern also helps in reducing stress and strain on the device, enhancing its overall reliability and durability.

Benefits of this technology:

  • Improved adhesion between the insulating material layer and the semiconductor substrate ensures better performance and reliability of the semiconductor device.
  • Enhanced electrical connectivity reduces the risk of failure and improves the overall functionality of the device.
  • The wave-shaped pattern helps in reducing stress and strain, leading to increased durability and longevity of the semiconductor device.


Original Abstract Submitted

A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, and a side surface between the first and second surfaces, and including a device region on the first surface a wiring structure on the surface of the semiconductor substrate, and having a dielectric layer and a metal wiring in the dielectric layer and electrically connected to the device region, and an insulating material layer on a side surface of the wiring structure and having a side surface connected to the side surface of the semiconductor substrate. The side surface of the insulating material layer has a first wave-shaped pattern in which concave-convex portions are repeated in a direction of the wiring structure that is perpendicular to the semiconductor substrate, and the side surface of the semiconductor substrate has a second wave-shaped pattern in which concave-convex portions are repeated in the direction.