17937429. STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS simplified abstract (International Business Machines Corporation)
Contents
- 1 STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS
Organization Name
International Business Machines Corporation
Inventor(s)
Nicholas Alexander Polomoff of Hopewell Junction NY (US)
Eric Perfecto of North Salem NY (US)
Katsuyuki Sakuma of Fishkill NY (US)
Mukta Ghate Farooq of Hopewell Junction NY (US)
Spyridon Skordas of Troy NY (US)
Sathyanarayanan Raghavan of Ballston Lake NY (US)
Michael P. Belyansky of Halfmoon NY (US)
STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17937429 titled 'STRUCTURE FOR HYBRID BOND CRACKSTOP WITH AIRGAPS
Simplified Explanation
The abstract describes a hybrid bonded semiconductor structure with voids aligned to form a unified void with airgaps across the hybrid bond interface.
- The structure includes a first substrate and a second substrate joined in a hybrid bond.
- Each substrate has a die portion and a crackstop structure adjacent to the die portion.
- One or more voids in the substrates are formed in or about a portion of the periphery of each crackstop structure.
- Some of the voids in the substrates are aligned to create a unified void with airgaps across the hybrid bond interface.
Potential Applications
The technology could be applied in the semiconductor industry for advanced chip packaging, MEMS devices, and sensors.
Problems Solved
This innovation helps prevent cracks from propagating through the semiconductor structure, improving overall reliability and performance.
Benefits
The hybrid bonded structure enhances the mechanical strength and thermal conductivity of the semiconductor device, leading to increased durability and efficiency.
Potential Commercial Applications
"Hybrid Bonded Semiconductor Structure for Enhanced Reliability and Performance"
Possible Prior Art
Prior art may include traditional semiconductor bonding techniques, such as direct bonding or adhesive bonding.
Unanswered Questions
How does the alignment of voids impact the overall performance of the semiconductor structure?
The alignment of voids may affect the mechanical stability and thermal properties of the device, but further research is needed to fully understand its implications.
What are the specific manufacturing processes involved in creating the voids and aligning them across the hybrid bond interface?
Details on the fabrication techniques and equipment used to form and align the voids in the substrates are not provided in the abstract.
Original Abstract Submitted
A hybrid bonded semiconductor structure includes a first substrate and a second substrate each having an interface joined in a hybrid bond. Each substrate has a die portion and a crackstop structure adjacent the die portion. One or more voids in the first substrate and the second substrate are formed in or about a portion of a periphery of each crackstop structure. At least some of the one or more voids in the first substrate and the second substrate are substantially aligned to form a unified void with airgaps across the hybrid bond interface.
- International Business Machines Corporation
- Nicholas Alexander Polomoff of Hopewell Junction NY (US)
- Eric Perfecto of North Salem NY (US)
- Katsuyuki Sakuma of Fishkill NY (US)
- Mukta Ghate Farooq of Hopewell Junction NY (US)
- Spyridon Skordas of Troy NY (US)
- Sathyanarayanan Raghavan of Ballston Lake NY (US)
- Michael P. Belyansky of Halfmoon NY (US)
- H01L23/00
- H01L25/065