17933875. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyun Geun Choi of Suwon-si (KR)

Ki Seok Lee of Hwaseong-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17933875 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The patent application describes a semiconductor memory device that includes multiple layers of insulating material, semiconductor patterns, gate electrodes, an information storage element, a bit line, and an insulating buffer film.

• The semiconductor memory device includes mold insulating layers and semiconductor patterns on a substrate.
• Gate electrodes are placed on the semiconductor patterns.
• An information storage element is included, which consists of a first electrode, a second electrode, and a capacitor dielectric film.
• The bit line is located on the substrate and contacts the semiconductor pattern.
• An insulating buffer film is present between the first electrodes and the second electrode and on the sidewall of the mold insulating layers.

Potential applications of this technology:

• Semiconductor memory devices can be used in various electronic devices such as computers, smartphones, and tablets.
• The technology can be applied in data storage systems, improving their performance and capacity.

Problems solved by this technology:

• The semiconductor memory device provides a compact and efficient design by utilizing multiple layers of insulating material and semiconductor patterns.
• The information storage element ensures reliable data storage and retrieval.

Benefits of this technology:

• The compact design of the semiconductor memory device allows for higher memory density, enabling the storage of more data in a smaller space.
• The efficient design and reliable information storage element contribute to improved performance and data access speed.

Original Abstract Submitted

According to some embodiments of the present inventive concept, a semiconductor memory device includes a plurality of mold insulating layers on a substrate and spaced apart from one another, a plurality of semiconductor patterns which are between respective ones of the plurality of mold insulating layers adjacent to each other, a plurality of gate electrodes, on respective ones of the plurality of semiconductor patterns, an information storage element which includes a first electrode electrically connected to each of the plurality of semiconductor patterns, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line on the substrate and contacts the semiconductor pattern, and an insulating buffer film between the first electrodes and the second electrode and on a sidewall of a respective one of the plurality of mold insulating layers.