17933874. HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract (International Business Machines Corporation)
Contents
- 1 HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
Organization Name
International Business Machines Corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY (US)
Albert M. Chu of Nashua NH (US)
Lawrence A. Clevenger of Saratoga Springs NY (US)
HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933874 titled 'HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS
Simplified Explanation
The semiconductor device described in the patent application includes a first via in a metal layer, which is a single damascene structure, and a second via in the metal level, which is a dual damascene structure.
- The first via in the metal layer is a single damascene structure.
- The second via in the metal level is a dual damascene structure.
Potential Applications
This technology could be applied in the semiconductor industry for advanced integrated circuits and electronic devices.
Problems Solved
1. Improved efficiency in semiconductor device manufacturing. 2. Enhanced performance and reliability of electronic devices.
Benefits
1. Higher integration density. 2. Reduced manufacturing costs. 3. Improved signal transmission.
Potential Commercial Applications
Optimizing Semiconductor Device Manufacturing Processes for Enhanced Performance
Possible Prior Art
Prior art may include patents related to damascene processes in semiconductor manufacturing.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
This article does not provide a direct comparison with existing methods in terms of cost-effectiveness.
What are the specific materials used in the formation of the damascene structures?
The article does not detail the specific materials used in the formation of the damascene structures.
Original Abstract Submitted
A semiconductor device and formation thereof. The semiconductor device includes a first via in a metal layer, wherein the first via is a single damascene structure. The semiconductor device further includes a second via in the metal level, wherein the second via is a dual damascene structure.
