17933363. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Bo Ram Gu of NAMYANGJU-SI (KR)
Ja Min Koo of Hwaseong-Si (KR)
Sung Gil Kim of Yongin-Si (KR)
Jong Hyeok Kim of Hwaseong-Si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933363 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a substrate with an active area and a bit line crossing the active area. A bit line contact is directly connected to the active area and includes an indent area and an upper area. The indent area has a decreasing width and a straight line slope forming a boundary with the substrate.
- The semiconductor memory device includes a substrate with an active area and a bit line crossing it.
- A bit line contact is directly connected to the active area.
- The bit line contact has an indent area and an upper area.
- The indent area has a decreasing width as it moves away from the bit line.
- The indent area has a straight line slope forming a boundary with the substrate.
- The starting point of the slope of the indent area is lower than the upper surface of the element separation layer.
Potential applications of this technology:
- Semiconductor memory devices in various electronic devices such as computers, smartphones, and tablets.
- Memory modules used in data centers and servers.
Problems solved by this technology:
- Provides a more efficient and reliable connection between the bit line and the active area.
- Reduces the risk of electrical interference and signal loss.
Benefits of this technology:
- Improved performance and reliability of semiconductor memory devices.
- Enhanced data transfer speed and storage capacity.
- Reduced power consumption and heat generation.
Original Abstract Submitted
A semiconductor memory device includes a substrate including an active area defined by an element separation layer, the active area including a first portion and second portions defined on both sides of the first portion a bit line crossing the active area and extending in a first direction on the substrate, and a bit line contact disposed between the substrate and the bit line and directly connected to the first portion of the active area. The bit line contact includes an indent area recessed into the substrate and an upper area on the indent area, a width of the indent area decreases as a distance from the bit line increases, the indent area includes a slope forming a boundary with the substrate and having a straight line shape, and a starting point of the slope of the indent area is lower than an upper surface of the element separation layer.
