17933000. INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER simplified abstract (Intel Corporation)
Contents
- 1 INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER
Organization Name
Inventor(s)
Charles Henry Wallace of Portland OR (US)
Richard E. Schenker of Portland OR (US)
Nikhil Jasvant Mehta of Portland OR (US)
INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17933000 titled 'INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER
Simplified Explanation
The abstract describes an IC device with a transistor, a first layer, and a second layer. The first layer contains a first structure with a first metal and a second structure with a second metal. The first structure may be a wordline of a memory, while the second structure may be a bitline.
- The first layer is positioned between the transistor and the second layer in a first direction.
- The first structure, containing a first metal like Ru, is shorter and narrower than the second structure, which includes a second metal like Cu.
- The second structure may be surrounded by a different material, possibly a third metal like Co.
- The first structure is closer to the second layer in the first direction.
Potential Applications
This technology could be applied in memory devices, specifically in improving the performance and efficiency of wordlines and bitlines.
Problems Solved
This innovation addresses the need for more efficient and compact memory devices by optimizing the design and materials used in the layers of the IC device.
Benefits
The benefits of this technology include enhanced performance, increased efficiency, and potentially reduced power consumption in memory devices.
Potential Commercial Applications
Potential commercial applications of this technology could include the production of faster and more reliable memory devices for various electronic products.
Possible Prior Art
One possible prior art could be the use of different metals in the layers of IC devices to improve performance and efficiency. However, the specific configuration described in this patent application may be novel.
Unanswered Questions
How does this technology compare to existing memory device designs in terms of speed and reliability?
This article does not provide a direct comparison with existing memory device designs, so it is unclear how this technology stacks up against current solutions.
Are there any limitations or drawbacks to implementing this innovation in memory devices?
The article does not mention any potential limitations or drawbacks of using this technology in memory devices, leaving room for further exploration into any challenges that may arise.
Original Abstract Submitted
An IC device includes a transistor, a first layer, and a second layer. The first layer is coupled to the transistors and is between the transistor and the second layer in a first direction. The first layer includes a first structure and a second structure. The first structure includes a first metal (e.g., Ru). The second structure includes a second metal (e.g., Cu). The second structure may be wrapped around by a different material that may include a third metal (e.g., Co). The first structure may be shorter than the second structure in the first direction and narrower than the second structure in a second direction orthogonal to the first direction. The first structure may be closer to the second layer than the second structure in the first direction. The first structure may be a wordline of a memory. The second structure may be a bitline.
