17932403. Reducing Parasitic Capacitance simplified abstract (QUALCOMM Incorporated)

Reducing Parasitic Capacitance

Organization Name

QUALCOMM Incorporated

Inventor(s)

Ranadeep Dutta of Del Mar CA (US)

Abdellatif Bellaouar of Richardson TX (US)

Chuan-Cheng Cheng of San Diego CA (US)

Reducing Parasitic Capacitance - A simplified explanation of the abstract

This abstract first appeared for US patent application 17932403 titled 'Reducing Parasitic Capacitance

Simplified Explanation

The patent application abstract describes an apparatus for reducing parasitic capacitance using a differential cascode configuration in an amplifier.

• The apparatus includes an amplifier with a differential cascode configuration.
• Each stack of the amplifier consists of a first transistor operating as an input stage and a second transistor operating as a cascode stage.
• The first and second transistors have two channel terminal regions with uniform doping types.
• The first channel terminal regions of the transistors abut a first and second quantity of electrical contacts, while the second channel terminal regions form a floating region at a floating node.
• The first and second quantity of electrical contacts are greater than a third quantity of electrical contacts abutting the surface of the floating region.

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1. 1. 1. Potential Applications

This technology could be applied in high-frequency communication systems, signal processing circuits, and low-power consumption devices.

1. 1. 1. Problems Solved

This innovation helps reduce parasitic capacitance, which can improve the performance and efficiency of electronic circuits by minimizing unwanted signal interference.

1. 1. 1. Benefits

- Enhanced signal integrity - Improved circuit efficiency - Reduced power consumption

1. 1. 1. Potential Commercial Applications

- Mobile devices - Internet of Things (IoT) devices - Wireless communication systems

1. 1. 1. Possible Prior Art

Prior art may include similar amplifier configurations used in electronic devices and circuits to reduce parasitic capacitance.

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1. 1. 1. Unanswered Questions

1. 1. 1. 1. How does this technology compare to existing methods for reducing parasitic capacitance in amplifiers?

This article does not provide a direct comparison with other methods or technologies commonly used for reducing parasitic capacitance in amplifiers.

1. 1. 1. 1. What specific performance improvements can be expected by implementing this differential cascode configuration in an amplifier?

The article does not detail the specific performance enhancements that can be achieved by utilizing this technology in amplifiers.

Original Abstract Submitted

An apparatus is disclosed for reducing parasitic capacitance. In an example aspect, an apparatus includes an amplifier having a differential cascode configuration. Each stack of the amplifier includes a first transistor configured to operate as an input stage and a second transistor configured to operate as a cascode stage. The first and second transistors each include two channel terminal regions having a doping type that is uniform across the two channel terminal regions. Surfaces of first channel terminal regions of the first and second transistors abut a first and second quantity of electrical contacts, respectively. Second channel terminal regions of the first and second transistors form a floating region at a floating node. Each of the first quantity of electrical contacts and the second quantity of electrical contacts is greater than a third quantity of electrical contacts abutting a surface of the floating region.