17931880. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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SEMICONDUCTOR DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jungmin Park of Seoul (KR)

Hanjin Lim of Seoul (KR)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17931880 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation

The patent application describes a semiconductor device that includes a capacitor and a substrate with contact plugs. The capacitor consists of two electrodes and a dielectric layer. The first electrode is in contact with the first contact plug and extends vertically from the substrate. The second electrode is spaced apart from the first electrode and also extends vertically. The dielectric layer is on the sidewalls of both electrodes, and there is an insulating division layer between portions of the dielectric layer.

  • The semiconductor device includes a capacitor with two electrodes and a dielectric layer.
  • The first electrode is in contact with the first contact plug and extends vertically from the substrate.
  • The second electrode is spaced apart from the first electrode and also extends vertically.
  • The dielectric layer is on the sidewalls of both electrodes.
  • An insulating division layer is formed between portions of the dielectric layer on the sidewalls of the first and second electrodes.
  • The second contact plug is in contact with the upper surface of the second electrode.

Potential Applications

  • This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
  • It can be utilized in memory modules, integrated circuits, and other semiconductor components.

Problems Solved

  • The device solves the problem of efficiently storing and retrieving data in electronic devices.
  • It addresses the need for a compact and reliable capacitor structure in semiconductor devices.

Benefits

  • The device provides improved performance and reliability in electronic devices.
  • It offers a compact design, allowing for more efficient use of space in semiconductor components.
  • The capacitor structure ensures efficient data storage and retrieval.


Original Abstract Submitted

A semiconductor device includes a first contact plug on a substrate, a capacitor, an insulating division layer, and a second contact plug. The capacitor includes first and second electrodes and a dielectric layer. The first electrode contacts an upper surface of the first contact plug, and extends in a vertical direction substantially perpendicular to an upper surface of the substrate. The second electrode is spaced apart from the first electrode, and extends in the vertical direction and includes lower and upper surfaces substantially coplanar with lower and upper surfaces, respectively, of the first electrode. The dielectric layer is on sidewalls of the first and second electrodes. The insulating division layer is formed between portions of the dielectric layer on the sidewalls of the first and second electrodes. The second contact plug contacts the upper surface of the second electrode.

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