17909191. INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODES WITH REDUCED STRAIN simplified abstract (Google LLC)

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INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODES WITH REDUCED STRAIN

Organization Name

Google LLC

Inventor(s)

Aurelien Jean Francois David of San Francisco CA (US)

INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODES WITH REDUCED STRAIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 17909191 titled 'INDIUM GALLIUM NITRIDE LIGHT EMITTING DIODES WITH REDUCED STRAIN

Simplified Explanation

The abstract describes a method of forming an LED emitter using III-nitride materials. Here are the key points:

  • The method involves providing a III-nitride layer on a substrate, with a planar top surface.
  • Discrete lateral growth regions are then provided on the top surface.
  • A base region, made of In(x)Ga(1-x)N material, is selectively epitaxially grown on each discrete lateral growth region. These base regions extend perpendicular to the top surface.
  • Surfaces of the In(x)Ga(1-x)N material on the base regions are provided with a relaxed strain and a base lattice constant within 0.1% of its bulk relaxed value.
  • LED regions are epitaxially grown on the surfaces, which include light-emitting layers of In(y)Ga(1-y)N material. These layers are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material and have an active region lattice constant within 0.1% of the base lattice constant.
  • The In(x)Ga(1-x)N material has a composition range of 0.05<x<0.2, and the In(y)Ga(1-y)N material has a composition range of y>0.3.

Potential applications of this technology:

  • LED emitters can be used in various lighting applications, including residential, commercial, and industrial lighting.
  • LED emitters can also be used in display technologies, such as televisions, computer monitors, and mobile devices.
  • This technology can be applied in automotive lighting, including headlights, taillights, and interior lighting.

Problems solved by this technology:

  • The method allows for the formation of LED emitters with improved performance and efficiency.
  • By using III-nitride materials, the resulting LED emitters can have high brightness and long lifespan.
  • The selective epitaxial growth technique enables precise control over the composition and strain of the LED regions, leading to enhanced device performance.

Benefits of this technology:

  • The method provides a reliable and efficient way to manufacture LED emitters.
  • The resulting LED emitters have improved performance characteristics, such as higher brightness and longer lifespan.
  • The use of III-nitride materials allows for compatibility with existing LED manufacturing processes and infrastructure.


Original Abstract Submitted

A method of forming an LED emitter includes: providing a III-nitride layer on a substrate (), the III-nitride layer having a planar top surface; providing discrete lateral growth regions on the top surface; selectively epitaxially growing, on each discrete lateral growth region, a base region () comprising an In(x)Ga(1-x)N material, each extending perpendicular to the top surface; providing surfaces of the In(x)Ga(1-x)N material on portions of the base regions (), the surfaces having a relaxed strain and being characterized by a base lattice constant within 0.1% of its bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions including light-emitting layers of In(y)Ga(1-y)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and characterized by an active region () lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.2 and y>0.3.

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