17901368. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Hye Ran Lee of Hwaseong-si (KR)
Kyung Soo Kim of Hwaseong-si (KR)
Kyoung Cho Na of Hwaseong-si (KR)
Se Ryeun Yang of Hwaseong-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17901368 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor memory device that includes various components such as a cell gate electrode, a bit line structure, fin-type patterns, and a peripheral gate electrode. It also mentions the presence of a peripheral interlayer insulating film and a cell line capping film.
- The semiconductor memory device includes a substrate with cell and peripheral regions.
- It has a cell gate electrode located at the cell region.
- A bit line structure is present at the cell region, consisting of a cell conductive line and a cell line capping film.
- Fin-type patterns are found at the peripheral region.
- A peripheral gate electrode crosses the fin-type patterns.
- A peripheral gate separation pattern is placed on the sidewall of the peripheral gate electrode, with its upper surface higher than the peripheral gate electrode.
- The device is covered by a peripheral interlayer insulating film that also covers the peripheral gate electrode and a portion of the sidewall of the peripheral gate separation pattern.
- The upper surface of the peripheral interlayer insulating film and the uppermost surface of the cell line capping film are positioned at the same height relative to the substrate.
Potential Applications
- This semiconductor memory device can be used in various electronic devices such as smartphones, tablets, and computers.
- It can be utilized in data storage systems, improving the performance and efficiency of memory devices.
Problems Solved
- The design of this semiconductor memory device solves the problem of integrating different components and structures in a compact and efficient manner.
- It addresses the challenge of maintaining uniform heights of various layers and films in the device.
Benefits
- The compact design of this semiconductor memory device allows for more efficient use of space in electronic devices.
- The uniform height of the different layers and films ensures proper functioning and reliability of the memory device.
- The integration of various components and structures improves the overall performance and efficiency of the device.
Original Abstract Submitted
A semiconductor memory device includes a substrate including cell and peripheral regions, a cell gate electrode disposed at the cell region, a bit line structure disposed at the cell region and including a cell conductive line and a cell line capping film disposed thereon, fin-type patterns disposed at the peripheral region, a peripheral gate electrode crossing the fin-type patterns, a peripheral gate separation pattern disposed on a sidewall of the peripheral gate electrode and having an upper surface higher than an upper surface of the peripheral gate electrode, and a peripheral interlayer insulating film covering the peripheral gate electrode, the peripheral gate separation pattern and a portion of a sidewall of the peripheral gate separation pattern. An upper surface of the peripheral interlayer insulating film and an uppermost surface of the cell line capping film are positioned at the same height relative to the substrate.
