17900227. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chih-Chang Hung of Hsinchu (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17900227 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The semiconductor device described in the patent application includes multiple channel regions and metal gate structures for improved performance and efficiency.
- The device has a first channel region with a first epitaxial structure.
- A second channel region, comprising a pair of second epitaxial structures, is located next to the first channel region.
- A third channel region, with a pair of third epitaxial structures, is formed over the substrate and adjacent to the first channel region.
- First and second metal gate structures extend in a lateral direction and traverse the second and third channel regions.
- The dielectric structure of the device has tilted sidewalls in its upper portion, enhancing its performance.
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- Potential Applications
- High-performance computing
- Mobile devices
- Internet of Things (IoT) devices
- Problems Solved
- Improved efficiency and performance of semiconductor devices
- Enhanced control over channel regions for better functionality
- Benefits
- Increased speed and efficiency in electronic devices
- Better power management capabilities
- Enhanced overall performance of semiconductor devices
Original Abstract Submitted
A semiconductor device includes a first channel region extending in a first lateral direction, and comprising a first epitaxial structure; a second channel region extends in the first lateral direction, next to the first channel region along a second lateral direction, and comprising a pair of second epitaxial structures; a third channel region formed over the substrate, extending in the first lateral direction, disposed next to the first channel region along the second lateral direction, and comprising a pair of third epitaxial structures; first and second metal gate structures extend in the second lateral direction and traverse the second and third channel regions, respectively. A first upper portion of the dielectric structure has its opposite sidewalls tilted away from each other along a vertical direction extending from a top surface of the dielectric structure toward the substrate.
