17899832. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Taemin Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17899832 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the abstract:
- The method involves preparing a substrate with cell regions and a scribe lane region.
- Circuit blocks are formed in the cell regions of the substrate.
- A bias pad is formed on the first surface of the substrate in the scribe lane region.
- A deuterium exchange structure is bonded to the second surface of the substrate.
- Deuterium is implanted into the deuterium exchange structure using plasma processing.
- A first voltage is applied to the bias pad, causing the diffusion of deuterium from the deuterium exchange structure into the substrate through the second surface.
Potential applications of this technology:
- Manufacturing of semiconductor devices, such as integrated circuits.
- Improving the performance and reliability of semiconductor devices.
Problems solved by this technology:
- Enhancing the performance and reliability of semiconductor devices by introducing deuterium into the substrate.
- Facilitating the diffusion of deuterium into the substrate through the second surface.
Benefits of this technology:
- Improved performance and reliability of semiconductor devices.
- Enhanced functionality and efficiency of integrated circuits.
- Increased lifespan and stability of semiconductor devices.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.
