17898330. PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
Contents
- 1 PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS
Organization Name
Inventor(s)
Byung Hoon Moon of Taichung (TW)
Kyle K. Kirby of Eagle ID (US)
PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17898330 titled 'PIEZOELECTRIC MATERIALS FOR ON-DIE THERMAL ENHANCEMENT OF HYBRID BONDING AND ASSOCIATED SYSTEMS AND METHODS
Simplified Explanation
The semiconductor die described in the abstract includes a semiconductor substrate, a dielectric layer, a bond pad with a recessed top surface, and a region of piezoelectric material located near the bond pad to supply thermal energy in response to an externally-applied field.
- Semiconductor die with a bond pad having a recessed top surface
- Region of piezoelectric material near the bond pad for supplying thermal energy
- Dielectric layer over the semiconductor substrate
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Thermal management in electronic devices
Problems Solved
- Efficient thermal management in semiconductor devices
- Improved performance and reliability of electronic components
Benefits
- Enhanced thermal energy supply to bond pads
- Increased efficiency in heat dissipation
- Improved overall performance and reliability of semiconductor devices
Original Abstract Submitted
A semiconductor die is provided, comprising a semiconductor substrate; a dielectric layer over the semiconductor substrate; a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate; and a region of piezoelectric material in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the piezoelectric material to an externally-applied field.
