17897876. SKIP VIA WITH LOCALIZED SPACER simplified abstract (International Business Machines Corporation)
Contents
SKIP VIA WITH LOCALIZED SPACER
Organization Name
International Business Machines Corporation
Inventor(s)
Chanro Park of Clifton Park NY (US)
Koichi Motoyama of Clifton Park NY (US)
Yann Mignot of Slingerlands NY (US)
Hsueh-Chung Chen of Cohoes NY (US)
SKIP VIA WITH LOCALIZED SPACER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17897876 titled 'SKIP VIA WITH LOCALIZED SPACER
Simplified Explanation
The patent application describes a microelectronics structure with a skip level via that extends from an upper level metal line through an interlevel dielectric level to make electrical contact with a lower level element without contacting an interlevel metal line. The skip level via includes a spacer on its sidewalls, while a single level via does not have this spacer.
- Skip level via extends from upper level metal line to lower level element without contacting interlevel metal line
- Skip level via includes spacer on sidewalls
- Single level via does not have spacer on sidewalls
Potential Applications
- Integrated circuits
- Semiconductor devices
- Microelectronics industry
Problems Solved
- Efficient routing of electrical connections
- Minimizing interference between metal lines
- Improving signal integrity
Benefits
- Enhanced performance of microelectronics structures
- Increased reliability of electrical connections
- Simplified manufacturing processes
Original Abstract Submitted
A microelectronics structure including a skip level via extending from an upper level metal line in an upper level of the at least two interlevel dielectric levels through a first an interlevel dielectric level that is on the substrate level without contacting an interlevel metal line. The skip level via extends into electrical contact with a first element of electrical contact features in a lower level of the at least two interlevel dielectric levels. The skip level via includes a spacer that is present on sidewalls of the skip level via. The structure also includes a single level via, in which the dielectric material of the spacer of the skip level via is not present on the sidewalls of the single level via.