17897438. DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES
Organization Name
Inventor(s)
Robert W. Mason of Boise ID (US)
Pitamber Shukla of Boise ID (US)
Steven Michael Kientz of Westminster CO (US)
DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17897438 titled 'DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES
Simplified Explanation
The abstract describes a system and method involving a memory device and a processing device that can increment a value stored in an accumulator, program data items to a memory management unit, and perform read operations based on voltage values.
- The processing device periodically increments a value in an accumulator by a composite parameter value.
- When receiving a program request, the device obtains a value from the accumulator and stores it in a program reference table before programming the data item to a memory management unit.
- When receiving a read request, the device obtains another value from the accumulator, calculates a read voltage value based on the difference between the two values, and uses this value to perform a read operation on the management unit.
Potential Applications
- Data storage systems
- Memory management in electronic devices
- Read/write operations in memory devices
Problems Solved
- Efficient programming and reading of data in memory devices
- Accurate voltage values for read operations
- Simplified management of memory units
Benefits
- Improved performance in memory operations
- Enhanced data storage capabilities
- Streamlined memory management processes
Original Abstract Submitted
Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including periodically, at a predefined frequency, incrementing a value stored in an accumulator by a composite parameter value; responsive to receiving a program request specifying a data item to be programmed to a management unit of the memory device, obtaining a first value from the accumulator; storing the first value to a program reference table; programming the data item to the management unit; responsive to receiving a read request specifying the management unit, obtaining a second value from the accumulator; determining a read voltage value based on a difference of the first value and the second value; and performing a read operation, using the read voltage value, on the management unit.
