17897350. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)

Memory Circuitry And Method Used In Forming Memory Circuitry

Organization Name

Micron Technology, Inc.

Inventor(s)

John D. Hopkins of Meridian ID (US)

Alyssa N. Scarbrough of Boise ID (US)

Memory Circuitry And Method Used In Forming Memory Circuitry - A simplified explanation of the abstract

This abstract first appeared for US patent application 17897350 titled 'Memory Circuitry And Method Used In Forming Memory Circuitry

Simplified Explanation

The abstract describes a method for forming memory circuitry using a stack of alternating conductive and insulative tiers, with an anisotropically-etched spacer used as a mask during etching to create multiple different-depth treads in a stair-step structure.

• Memory circuitry formed by stacking conductive and insulative tiers
• Anisotropically-etched spacer used as a mask during etching process
• Multiple different-depth treads created in stair-step structure
• Treads consist of conducting material from the conductive tiers

• • Potential Applications:**

• Memory devices
• Integrated circuits
• Semiconductor manufacturing

• • Problems Solved:**

• Efficient formation of memory circuitry
• Precise etching of different-depth treads
• Improved performance of memory devices

• • Benefits:**

• Higher memory capacity
• Enhanced circuitry performance
• Increased manufacturing efficiency

Original Abstract Submitted

A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The stair-step region comprises a flight of stairs extending along a first direction. The first tiers are conductive and the second tiers are insulative at least in a finished-circuitry construction. An anisotropically-etched spacer is formed extending along the first direction directly above the flight of stairs. The anisotropically-etched spacer is used as a mask while etching through one of the first tiers and one of the second tiers in individual of the stairs to form multiple different-depth treads in the individual stairs along a second direction that is orthogonal to the first direction. Individual of the treads comprise conducting material of individual of the first tiers in the finished-circuitry construction. Other aspects, including structure independent of method, are disclosed.