17896745. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Meng-Han Lin of Hsinchu City (TW)

Chia-En Huang of Xinfeng Township (TW)

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896745 titled 'SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The semiconductor device described in the patent application consists of multiple ferroelectric memory cells arranged on a substrate. Each memory cell includes:

• A first conductive structure with a central portion and two side portions extending in different directions.
• A ferroelectric layer on top of the first conductive structure.
• A channel film above a portion of the ferroelectric layer.
• A second conductive structure in contact with the channel film.
• A third conductive structure also in contact with the channel film.

Potential applications of this technology:

• Non-volatile memory devices
• High-speed data storage
• Low-power consumption electronics

Problems solved by this technology:

• Improving memory cell performance
• Enhancing data retention capabilities
• Reducing power consumption in electronic devices

Benefits of this technology:

• Faster data access and retrieval
• Increased reliability of memory storage
• Lower energy consumption for electronic devices.

Original Abstract Submitted

A semiconductor device includes a plurality of ferroelectric memory cells arranged over a substrate. Each of the plurality of ferroelectric memory cells includes: a first conductive structure extending along a first lateral direction and having a central portion and a pair of side portions, the side portions respectively extending away from the central portion along a second lateral direction perpendicular to the first lateral direction; a ferroelectric layer disposed above the first conductive structure and in contact with the central portion of the first conductive structure; a channel film disposed above a portion of the ferroelectric layer; a second conductive structure disposed above and in contact with the channel film; and a third conductive structure disposed above and in contact with the channel film.