SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17896726 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The method described in the patent application involves using an organometallic material in a photoresist layer to pattern a target layer using extreme ultraviolet (EUV) radiation.

Depositing a photoresist layer containing an organometallic material over a target layer
Exposing the photoresist layer to EUV radiation
Developing the exposed photoresist layer to create a pattern
Forming a spacer on the sidewall of the photoresist pattern
Removing the photoresist pattern
Patterning the target layer through the spacer

Potential Applications

Semiconductor manufacturing
Nanotechnology
Optoelectronics

Problems Solved

High-resolution patterning
Improved precision in target layer patterning
Enhanced manufacturing processes

Benefits

Increased efficiency in patterning processes
Higher quality and precision in pattern formation
Potential for advancements in various industries such as electronics and optics

Original Abstract Submitted

A method includes depositing a photoresist layer over a target layer, the photoresist layer comprising an organometallic material; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation; developing the exposed photoresist layer to form a photoresist pattern; forming a spacer on a sidewall of the photoresist pattern; removing the photoresist pattern; after removing the photoresist pattern, patterning the target layer through the spacer.

17896726. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

Contents

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Inventor(s)