17896241. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Donghwa Kwak of Suwon-si, Gyeonggi-do (KR)
Kyung Don Mun of Asan-si, Gyeonggi-do (KR)
Wonsok Lee of Suwon-si, Gyeonggi-do (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17896241 titled 'SEMICONDUCTOR MEMORY DEVICE
Simplified Explanation
The abstract describes a semiconductor memory device that includes various components such as active regions, word lines, bit lines, contact plugs, and capacitors.
- The device is built on a substrate with active regions containing impurity regions.
- Word lines are present on the substrate's first surface, extending in one direction.
- First bit lines are placed on the word lines, crossing the first direction.
- The first bit lines are connected to the first impurity regions.
- First contact plugs are located between the first bit lines and connected to the second impurity regions.
- Second bit lines are present on the substrate's second surface and electrically connected to the first impurity regions.
- A first capacitor is placed on the first contact plugs.
Potential applications of this technology:
- Memory devices: This semiconductor memory device can be used in various memory applications, such as computer systems, mobile devices, and other electronic devices that require data storage.
Problems solved by this technology:
- Increased memory capacity: The design of this semiconductor memory device allows for increased memory capacity due to the arrangement of active regions, bit lines, and contact plugs.
Benefits of this technology:
- Improved performance: The use of word lines, bit lines, and contact plugs in this memory device enhances its performance by providing efficient data storage and retrieval.
- Space-saving design: The placement of components on different surfaces of the substrate allows for a compact and space-saving design, making it suitable for miniaturized electronic devices.
Original Abstract Submitted
A semiconductor memory device includes a substrate including active regions, the active regions having first impurity regions and second impurity regions, word lines on a first surface of the substrate, the word lines extending in a first direction, first bit lines on the word lines, the first bit lines extending in a second direction crossing the first direction, and the first bit lines being connected to the first impurity regions, first contact plugs between the first bit lines, the first contact plugs being connected to the second impurity regions, respectively, second bit lines on a second surface of the substrate, the second bit lines being electrically connected to the first impurity regions, and a first capacitor on the first contact plugs.
