17895342. CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

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CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chan-Hong Chern of Palo Alto CA (US)

CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17895342 titled 'CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE

Simplified Explanation

The semiconductor structure described in the patent application includes a semiconductor waveguide layer sandwiched between two dielectric layers, with cladding layers on either side of the waveguide layer.

  • The semiconductor waveguide layer is positioned over a second dielectric layer and between sidewalls of a first dielectric layer.
  • A first cladding layer is located between the sidewalls of the first dielectric layer and directly above the semiconductor waveguide layer.
  • A second cladding layer is situated between sidewalls of the second dielectric layer and directly below the semiconductor waveguide layer.
  • The refractive index differences between the semiconductor waveguide layer and the cladding layers are carefully controlled to optimize light propagation within the structure.

Potential Applications:

  • Optical communication systems
  • Photonic integrated circuits
  • Laser technology

Problems Solved:

  • Improving light confinement and transmission efficiency in semiconductor devices
  • Enhancing the performance of optical components

Benefits:

  • Increased data transmission speeds
  • Higher efficiency in optical devices
  • Improved overall performance of semiconductor structures


Original Abstract Submitted

A semiconductor structure including a semiconductor waveguide layer over a second dielectric layer and between sidewalls of a first dielectric layer. A first cladding layer is between the sidewalls of the first dielectric layer and directly over the semiconductor waveguide layer. A second cladding layer is between sidewalls of the second dielectric layer and directly under the semiconductor waveguide layer. A difference between a refractive index of the semiconductor waveguide layer and a refractive index of the first cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the first dielectric layer. A difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second dielectric layer.

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