17895286. Conductive Via With Improved Gap Filling Performance simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
Conductive Via With Improved Gap Filling Performance
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tzu-Yu Lin of Taoyuan City (TW)
Conductive Via With Improved Gap Filling Performance - A simplified explanation of the abstract
This abstract first appeared for US patent application 17895286 titled 'Conductive Via With Improved Gap Filling Performance
Simplified Explanation
The patent application describes a process for forming a conductive structure over a layer containing a conductive component, involving the use of a dielectric structure and multiple deposition and treatment processes.
- A dielectric structure is formed over a layer containing a conductive component.
- An opening is created in the dielectric structure to expose the upper surface of the conductive component.
- A first conductive layer is deposited over the dielectric structure and partially in the opening through a deposition process.
- A treatment process is then carried out on a first portion of the first conductive layer to introduce a non-metal material to it.
- Subsequently, a second deposition process is performed to at least partially fill the opening with a second conductive layer without trapping a gap therein.
Potential Applications:
- Microelectronics manufacturing
- Semiconductor device fabrication
- Integrated circuit production
Problems Solved:
- Enhancing conductivity in electronic components
- Improving adhesion between layers in semiconductor devices
Benefits:
- Increased performance and reliability of electronic devices
- Enhanced efficiency in manufacturing processes
- Improved integration of different materials in semiconductor structures
Original Abstract Submitted
A dielectric structure is formed over a layer than contains a conductive component. An opening is formed in the dielectric structure. The opening exposes an upper surface of the conductive component. A first deposition process is performed that deposits a first conductive layer over the dielectric structure and partially in the opening. A treatment process is performed on a first portion of the first conductive layer formed over the dielectric structure. The treatment process introduces a non-metal material to the first portion of the first conductive layer. After the treatment process has been performed, a second deposition process is performed that at least partially fills the opening with a second conductive layer without trapping a gap therein.
