17894614. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yu-Hsien Lin of Kaohsiung (TW)
Chia Ming Liang of Hsinchu (TW)
Ryan Chia-Jen Chen of Hsinchu (TW)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17894614 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
Simplified Explanation
The semiconductor device described in the patent application includes a semiconductor fin, first spacers, a metal gate structure, and a gate electrode.
- The semiconductor fin is a key component of the device.
- First spacers are positioned over the semiconductor fin.
- A metal gate structure is located over the semiconductor fin and is sandwiched by the first spacers.
- A gate electrode makes contact with the metal gate structure.
- The interface between the metal gate structure and the gate electrode has specific dimensions, with side portions extending towards the semiconductor fin at a shorter distance compared to the central portion.
- Potential Applications:**
- Advanced semiconductor devices
- High-performance electronic devices
- Integrated circuits
- Problems Solved:**
- Improving performance and efficiency of semiconductor devices
- Enhancing gate electrode contact with metal gate structure
- Optimizing interface design for better functionality
- Benefits:**
- Increased device performance
- Enhanced reliability
- Improved manufacturing processes
Original Abstract Submitted
A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.
