17894398. CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES simplified abstract (Micron Technology, Inc.)

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CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES

Organization Name

Micron Technology, Inc.

Inventor(s)

Curtis Egan of Brighton CO (US)

CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17894398 titled 'CODING TO DECREASE ERROR RATE DISCREPANCY BETWEEN PAGES

Simplified Explanation

The patent application describes methods, systems, and devices for coding to decrease error rate discrepancy between pages in a memory device.

  • Identification of unit-distance code for operating a memory device
  • Mapping read voltages to pages of memory cell using unit-distance codes
  • Association of pages with subsets of read voltages for each unit-distance code
  • Identification of average read voltage drifts for each page
  • Operation of memory device using unit-distance code with smaller range of average read voltage drifts

Potential Applications

  • Memory devices
  • Data storage systems
  • Computer hardware

Problems Solved

  • Decrease error rate discrepancy between pages in memory devices
  • Improve reliability and performance of memory devices

Benefits

  • Enhanced data integrity
  • Increased efficiency in data storage
  • Improved overall performance of memory devices


Original Abstract Submitted

Methods, systems, and devices for coding to decrease error rate discrepancy between pages are described. For example, to identify a unit-distance code for operating a memory device, voltage drifts of a set of read voltages after a duration may be identified and each of the read voltages may be mapped to one of a set of pages of the memory cell using various possible unit-distance codes. Thus, for each unit-distance code the set of pages may be associated with respective subsets of the set of read voltages. Then, for each unit-distance code a set of average read voltage drifts corresponding to one of the set of pages may be identified. The memory device may be operated using a unit-distance code associated with a smaller range of the set of average read voltage drifts than ranges of sets of average read voltage drifts associated with other unit-distance codes.