17893783. PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jongchul Park of Seoul (KR)

Sanghyun Lee of Hwaseong-si (KR)

PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17893783 titled 'PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD USING THE SAME, AND SEMICONDUCTOR FABRICATION METHOD USING THE SAME

Simplified Explanation

The abstract describes a plasma etching apparatus that includes a chuck to support a wafer and a voltage application unit. The voltage application unit has two parts: a first part that applies a first voltage to the wafer on the chuck, and a second part that applies a different second voltage to the wafer on the chuck.

  • The plasma etching apparatus includes a chuck to support a wafer.
  • The voltage application unit has two parts: a first part and a second part.
  • The first part applies a first voltage to the wafer on the chuck.
  • The second part applies a different second voltage to the wafer on the chuck.
  • The second voltage is different from the first voltage.

Potential Applications:

  • Semiconductor manufacturing: This plasma etching apparatus can be used in the manufacturing process of semiconductors to etch patterns on wafers.
  • Microelectronics fabrication: The apparatus can be utilized in the fabrication of microelectronic devices, such as integrated circuits and microchips.

Problems Solved:

  • Enhanced etching control: The use of two different voltages allows for more precise control over the etching process, resulting in improved accuracy and quality of etched patterns.
  • Uniformity improvement: The ability to apply different voltages to different areas of the wafer helps to achieve a more uniform etching across the entire surface.

Benefits:

  • Improved etching precision: The ability to apply different voltages enables more precise control over the etching process, leading to higher accuracy in pattern formation.
  • Enhanced process flexibility: The use of two voltage application parts provides greater flexibility in adjusting the etching parameters, allowing for optimization of the process for different materials and patterns.
  • Increased productivity: The improved etching control and uniformity contribute to higher yields and reduced rework, resulting in increased productivity in semiconductor and microelectronics manufacturing.


Original Abstract Submitted

A plasma etching apparatus includes a chuck configured to support a wafer, and a voltage application unit. The voltage application unit includes a first voltage application part configured to apply a first voltage to the wafer on the chuck, and a second voltage application part configured to apply a second voltage to the wafer on the chuck, the second voltage being different from the first voltage.

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