17893770. SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Jungha Hwang of Yongin-si (KR)
Dongchan Lim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17893770 titled 'SEMICONDUCTOR DEVICE INCLUDING CONDUCTIVE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device that includes an insulating structure and a conductive structure within it. The conductive structure consists of multiple layers, including a barrier layer, an anti-migration layer, a liner, a conductive layer, and a capping layer. The capping layer and the liner both contain cobalt (Co), while the anti-migration layer contains manganese (Mn).
- The semiconductor device includes an insulating structure and a conductive structure.
- The conductive structure consists of multiple layers: barrier layer, anti-migration layer, liner, conductive layer, and capping layer.
- The capping layer and the liner both contain cobalt (Co).
- The anti-migration layer contains manganese (Mn).
Potential Applications
This technology has potential applications in various semiconductor devices, including:
- Integrated circuits
- Transistors
- Microprocessors
- Memory devices
- Sensors
Problems Solved
The technology addresses several problems in semiconductor devices, such as:
- Migration of materials within the conductive structure
- Insulating the conductive structure from the surrounding environment
- Enhancing the performance and reliability of the semiconductor device
Benefits
The use of this technology offers several benefits, including:
- Improved stability and durability of the semiconductor device
- Reduced material migration, leading to enhanced performance
- Increased resistance to environmental factors
- Enhanced overall functionality and reliability of the device
Original Abstract Submitted
A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.
