17888369. LAYOUT DESIGN OF CUSTOM STACK CAPACITOR TO PROCURE HIGH CAPACITANCE simplified abstract (QUALCOMM Incorporated)
Contents
LAYOUT DESIGN OF CUSTOM STACK CAPACITOR TO PROCURE HIGH CAPACITANCE
Organization Name
Inventor(s)
Prakash Rattaisutripalayam Palanisamy of Bangalore (IN)
Bavireddy Sai Krishna of Guntur (IN)
Balavva Shivappa Kamatagi of BAILHONGAL (IN)
LAYOUT DESIGN OF CUSTOM STACK CAPACITOR TO PROCURE HIGH CAPACITANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17888369 titled 'LAYOUT DESIGN OF CUSTOM STACK CAPACITOR TO PROCURE HIGH CAPACITANCE
Simplified Explanation
The abstract describes a chip with a first capacitor that includes first electrodes made from metal layer M0, where the first electrodes are connected to each other. The first capacitor also includes second electrodes made from the same metal layer M0, where the second electrodes are connected to each other.
- The chip includes a first capacitor with interconnected first electrodes made from metal layer M0.
- The first capacitor also has interconnected second electrodes made from metal layer M0.
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- Potential Applications
- Integrated circuits
- Electronic devices
- Capacitor-based systems
- Problems Solved
- Efficient use of space on a chip
- Improved performance of capacitors
- Enhanced functionality of electronic devices
- Benefits
- Increased capacitance
- Better electrical connectivity
- Compact design for electronic components
Original Abstract Submitted
A chip includes a first capacitor. The first capacitor includes first electrodes formed from metal layer M0, wherein the first electrodes are coupled to one another. The first capacitor also includes second electrodes formed from the metal layer M0, wherein the second electrodes are coupled to one another.
