17887983. IMAGE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
IMAGE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Tzu-Hsuan Hsu of Kaohsiung (TW)
IMAGE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887983 titled 'IMAGE SENSOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes an image sensor device with an isolation grid structure made up of isolation grid segments surrounding image-sensing elements, including a passivation liner and a conductive material like indium-tin-oxide.
- Image sensor device with isolation grid structure
- Isolation grid segments surround image-sensing elements
- Includes passivation liner and conductive material like indium-tin-oxide
Potential Applications
- Digital cameras
- Smartphones
- Surveillance systems
- Medical imaging devices
Problems Solved
- Improved isolation of image-sensing elements
- Enhanced performance and reliability of image sensor devices
Benefits
- Higher quality images
- Increased durability and longevity
- Improved functionality in various electronic devices
Original Abstract Submitted
An image sensor device and methods of forming an image sensor device are provided. The image sensor device includes a plurality of image-sensing elements arranged within the device substrate. The image sensor device further includes an isolation grid structure extending into the device substrate and made up of a plurality of isolation grid segments that surround the outer perimeters of the plurality of image-sensing elements. The isolation grid structure includes a passivation liner and a conductive material in contact with the passivation liner. The conductive material may be an indium-tin-oxide film.
