17887887. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
Hyuk Soon Choi of Seongnam-si (KR)
Min-Jun Choi of Hwaseong-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887887 titled 'IMAGE SENSOR
Simplified Explanation
The abstract describes an image sensor with a lattice-shaped trench structure that isolates unit pixels and capacitor structures. The capacitor structures include electrodes and a dielectric layer. A capacitor isolation pattern is used to isolate the capacitor structures.
- The image sensor includes a substrate with unit pixels that have photoelectric conversion elements.
- A lattice-shaped trench is formed in the substrate to isolate the unit pixels.
- The trench contains capacitor structures with electrodes and a dielectric layer.
- A capacitor isolation pattern is used to isolate the capacitor structures.
Potential Applications
This technology can be applied in various fields where image sensors are used, such as:
- Digital cameras
- Smartphones
- Surveillance systems
- Medical imaging devices
Problems Solved
The patent addresses the following problems in image sensor technology:
- Isolation of unit pixels to prevent crosstalk and interference.
- Efficient utilization of space by using a lattice-shaped trench structure.
- Improved performance and sensitivity of the image sensor.
Benefits
The use of this technology offers several benefits:
- Enhanced image quality and resolution.
- Reduced noise and interference.
- Compact design and efficient use of space.
- Improved performance and sensitivity of the image sensor.
Original Abstract Submitted
An image sensor is provided. The image sensor includes a substrate including a plurality of unit pixels, each of unit pixels includes a photoelectric conversion element; a first trench formed in the substrate in a lattice shape to isolate the plurality of unit pixels; a plurality of first capacitor structures extended along a sidewall of the first trench in the first trench, including a first electrode, a second electrode, and a first dielectric layer between the first electrode and the second electrode; and a first capacitor isolation pattern at a lattice point of the first trench to isolate the plurality of first capacitor structures.
