17887490. TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Georgios Vellianitis of Heverlee (BE)
Sai-Hooi Yeong of Hsinchu County (TW)
TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 17887490 titled 'TRANSISTOR, INTEGRATED CIRCUIT, AND MANUFACTURING METHOD OF TRANSISTOR
Simplified Explanation
The patent application describes a transistor with a gate electrode, a ferroelectric layer, a source pattern, a drain pattern, and a channel layer.
- The ferroelectric layer is on the gate electrode.
- The source pattern and drain pattern are on top of the ferroelectric layer.
- The channel layer consists of a base and fins extending from the base, with the base in contact with the ferroelectric layer.
- The fins are positioned between the source pattern and the drain pattern.
Potential Applications:
- Advanced electronic devices
- Memory storage devices
- High-performance computing systems
Problems Solved:
- Improved transistor performance
- Enhanced data retention in memory devices
- Increased efficiency in computing systems
Benefits:
- Higher speed and efficiency in electronic devices
- Enhanced data storage capabilities
- Improved overall performance of computing systems
Original Abstract Submitted
A transistor includes a gate electrode, a ferroelectric layer, a source pattern, a drain pattern, and a channel layer. The ferroelectric layer is disposed on the gate electrode. The source pattern and the drain pattern are disposed over the ferroelectric layer. The channel layer has a base and fins protruding from the base. The base is in contact with the ferroelectric layer. The fins are located between the source pattern and the drain pattern.
