17886433. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yu-Ting Weng of Taichung City (TW)
Chiung Wen Hsu of Tainan City (TW)
Chao-Cheng Chen of Hsin-Chu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17886433 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, a fin structure on the substrate with a ridge portion and a bottom portion, a metal gate structure on the fin structure, and an epitaxy region connected to the fin structure.
- The fin structure has a channel region and a fin region between the channel region and the bottom portion.
- The critical dimension of the bottom portion increases towards the substrate to twice or more of the critical dimension of the channel region.
- The metal gate structure extends in the cross-fin direction.
- The epitaxy region is beside the metal gate structure in the lengthwise direction of the fin structure.
- Potential Applications
- Advanced semiconductor devices
- High-performance electronic devices
- Problems Solved
- Improving device performance
- Enhancing integration density
- Benefits
- Increased speed and efficiency
- Better control over device characteristics
- Potential for smaller and more powerful electronic devices
Original Abstract Submitted
A semiconductor device and a method of fabricating a semiconductor device are provided herein. The semiconductor device includes a substrate; a fin structure arranged on the substrate and including a ridge portion and a bottom portion between the ridge portion and the substrate, wherein the ridge portion comprises a channel region and a fin region between the channel region and the bottom portion, a critical dimension of the bottom portion in a cross-fin direction is gradually increased toward the substrate to twice or more of a critical dimension of the channel region in the cross-fin direction; a metal gate structure disposed on the fin structure extending the cross-fin direction; and an epitaxy region disposed beside the metal gate structure in a lengthwise direction of the fin structure and connected to the fin structure.
