17886215. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yu-Lien Huang of Hsinchu County (TW)
Tze-Liang Lee of Hsinchu City (TW)
Jr-Hung Li of Hsinchu County (TW)
Chi-Hao Chang of Taoyuan City (TW)
Hao-Yu Chang of Taipei City (TW)
Pei-Yu Chou of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17886215 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The method described in the patent application involves forming a semiconductor device by:
- Forming a dummy gate structure across a fin protruding from a substrate
- Forming gate spacers on opposite sidewalls of the dummy gate structure
- Forming source/drain epitaxial structures on opposite sides of the dummy gate structure
- Forming a first interlayer dielectric (ILD) layer on the source/drain epitaxial structures and outer sidewalls of the gate spacers
- Replacing the dummy gate structure with a replacement gate structure
- Etching back the replacement gate structure to form a first recess between the gate spacers
- Forming a source/drain contact in the first ILD layer
- Forming a second interlayer dielectric (ILD) layer to fill in the first recess between the gate spacers and over the source/drain contact
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuits
- Transistors
Problems solved by this technology:
- Improving performance and efficiency of semiconductor devices
- Enhancing the functionality of integrated circuits
- Reducing power consumption
Benefits of this technology:
- Higher performance and efficiency in semiconductor devices
- Enhanced functionality and capabilities in integrated circuits
- Lower power consumption and improved energy efficiency
Original Abstract Submitted
A method of forming a semiconductor device includes forming a dummy gate structure across a fin protruding from a substrate, forming gate spacers on opposite sidewalls of the dummy gate structure, forming source/drain epitaxial structures on opposite sides of the dummy gate structure, forming a first interlayer dielectric (ILD) layer on the source/drain epitaxial structures and outer sidewalls of the gate spacers, replacing the dummy gate structure with a replacement gate structure, etching back the replacement gate structure to form a first recess between the gate spacers, forming a source/drain contact in the first ILD layer, and forming a second interlayer dielectric (ILD) layer to fill in the first recess between the gate spacers and over the source/drain contact.
