17885025. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jun Ki Park of Hwaseong-si (KR)
Wan Don Kim of Seongnam-si (KR)
Sung Hwan Kim of Hwaseong-si (KR)
Tae Yeol Kim of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 17885025 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a specific structure and arrangement of components. Here are the key points:
- The device includes a gate structure with a gate electrode on a substrate.
- A source/drain pattern is positioned on a side surface of the gate electrode on the substrate.
- A source/drain contact is placed on the source/drain pattern.
- A first conductive pad is located on the source/drain contact.
- A second conductive pad is positioned on the gate structure.
- A via plug connects the first conductive pad to the source/drain contact.
- A gate contact connects the gate electrode to the second conductive pad.
- A portion of the via plug protrudes from the first conductive pad.
- A portion of the gate contact protrudes from the second conductive pad.
- The height from the upper surface of the gate structure to the upper surface of the via plug is equal to the height from the upper surface of the gate structure to the upper surface of the gate contact.
Potential applications of this technology:
- Semiconductor devices used in various electronic devices such as smartphones, computers, and tablets.
- Integrated circuits and microprocessors that require efficient and reliable gate structures.
Problems solved by this technology:
- Provides a specific arrangement of components that ensures proper connectivity and functionality of the semiconductor device.
- Helps in improving the performance and reliability of the device by maintaining equal heights between different components.
Benefits of this technology:
- Enhanced electrical connectivity between the gate electrode and the source/drain pattern.
- Improved overall performance and reliability of the semiconductor device.
- Enables efficient integration of the device into various electronic applications.
Original Abstract Submitted
A semiconductor device includes a gate structure including a gate electrode on a substrate. A source/drain pattern is on the substrate and positioned on a side surface of the gate electrode. A source/drain contact is on the source/drain pattern. A first conductive pad is on the source/drain contact. A second conductive pad is on the gate structure. A via plug penetrates the first conductive pad and is connected to the source/drain contact. A gate contact penetrates the second conductive pad and is connected to the gate electrode. A portion of the via plug protrudes from the first conductive pad. A portion of the gate contact protrudes from the second conductive pad. A height from an upper surface of the gate structure to an upper surface of the via plug is equal to a height from the upper surface of the gate structure to an upper surface of the gate contact.
