17884853. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Min Gu Kang of Hwaseong-si (KR)

Sang Don Zoo of Hwaseong-si (KR)

Joon Sung Kim of Seoul (KR)

Junghwan Park of Hwaseong-si (KR)

Seorim Moon of Seoul (KR)

Seok Cheon Baek of Hwaseong-si (KR)

Cheol Ryou of Hwaseong-si (KR)

Sun Young Lee of Hwaseong-si (KR)

Cheol-Min Lim of Hwaseong-si (KR)

SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17884853 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Simplified Explanation

The abstract describes a semiconductor memory device that includes a substrate with two block regions and a stacked structure with insulating films and gate electrodes. The device also has a vertical channel structure, a word line cut structure, and a block cut structure that penetrate the stacked structure. The word line cut structure extends in one direction, while the block cut structure extends in another direction and connects to the word line cut structure to define the block regions. The block cut structure has a first portion connected to the word line cut structure and a second portion connected to the first portion. The first portion includes a part that does not overlap with the second portion in one direction and a region that does not overlap with the word line cut structure in the same direction.

• The semiconductor memory device includes a substrate with two block regions and a stacked structure with insulating films and gate electrodes.
• The device has a vertical channel structure, a word line cut structure, and a block cut structure that penetrate the stacked structure.
• The word line cut structure extends in one direction, while the block cut structure extends in another direction and connects to the word line cut structure.
• The block cut structure defines the first and second block regions and includes a first portion connected to the word line cut structure and a second portion connected to the first portion.
• The first portion of the block cut structure does not overlap with the second portion in one direction and does not overlap with the word line cut structure in the same direction.

Potential Applications

• Semiconductor memory devices
• Integrated circuits
• Electronics industry

Problems Solved

• Efficient organization and management of memory in semiconductor devices
• Improved performance and functionality of memory devices

Benefits

• Enhanced memory storage capacity
• Improved data transfer speeds
• More efficient use of space in semiconductor devices
• Increased reliability and durability of memory devices

Original Abstract Submitted

A semiconductor memory device may include a substrate including a first and a second block region, and a stacked structure including insulating films and gate electrodes alternately stacked on the substrate. A vertical channel structure, a word line cut structure, and a block cut structure may penetrate the stacked structure. The word line cut structure may extend in a second direction. The block cut structure may extend in a first direction, connect to the word line cut structure, and define the first and second block regions. The block cut structure may include a first portion connected to the word line cut structure and a second portion connected to the first portion. From a planar viewpoint, the first portion may include at least a part not overlapping the second portion in the first direction and at least a region not overlapping the word line cut structure in the first direction.