17884817. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chin-Lung Chung of Hsinchu (TW)
Yun-Chi Chiang of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17884817 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes various structures such as dielectric structure, conductive structure, dielectric feature, conductive element, and barrier feature.
- The device has a dielectric structure where a conductive structure is placed.
- A first dielectric feature is positioned over the dielectric structure.
- A conductive element is located within the first dielectric feature and is connected to the conductive structure.
- A barrier feature surrounds the conductive element and is situated outside of the conductive structure.
- Potential Applications:**
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
- Problems Solved:**
- Enhancing device performance
- Improving signal transmission
- Reducing interference
- Benefits:**
- Increased efficiency
- Enhanced reliability
- Better overall device functionality
Original Abstract Submitted
A semiconductor device includes a dielectric structure, a conductive structure disposed in the dielectric structure, a first dielectric feature disposed over the dielectric structure, a conductive element disposed in the first dielectric feature and connected to the conductive structure, and a barrier feature disposed around the conductive element and disposed outside of the conductive structure.
