17883778. DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME
Organization Name
Inventor(s)
Hyunsu Hwang of Siheung-si (KR)
Junyun Kweon of Cheonan-si (KR)
DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17883778 titled 'DRY ETCHING APPARATUS AND WAFER ETCHING SYSTEM USING THE SAME
Simplified Explanation
The patent application describes a dry etching apparatus used in semiconductor manufacturing processes. The apparatus includes a plasma process chamber, an edge ring, a shadow ring, an operation unit, a fixing portion, and a distance control unit.
- The plasma process chamber is where the etching process takes place.
- The edge ring is a component on which a wafer is mounted during the etching process.
- The shadow ring is positioned above the edge ring at a specific distance during the etching process.
- The operation unit is connected to the shadow ring and has a lift pin that can raise and lower the shadow ring.
- The fixing portion has multiple fixing pins that engage with the lift pin to determine the lowering point of the shadow ring.
- The distance control unit controls the fixing portion to set the specific distance between the shadow ring and the edge ring.
- The specific distance is determined by the horizontal distance between the wafer and the edge ring.
Potential applications of this technology:
- Semiconductor manufacturing processes that involve dry etching.
- Any process that requires precise control of the distance between components.
Problems solved by this technology:
- Ensures consistent and accurate positioning of the shadow ring during the etching process.
- Provides a mechanism to easily adjust and fix the lowering point of the shadow ring.
Benefits of this technology:
- Improves the quality and uniformity of the etching process.
- Reduces the risk of damage to the wafer or other components.
- Allows for efficient and reliable manufacturing of semiconductor devices.
Original Abstract Submitted
Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.
